Title :
On the transient photoconductive decay technique for lifetime extraction in HgCdTe
Author :
Redfern, D.A. ; Musca, C.A. ; Smith, E.P.G. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
Abstract :
The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique
Keywords :
II-VI semiconductors; cadmium compounds; carrier lifetime; mercury compounds; minority carriers; photoconductivity; surface recombination; HgCdTe; lifetime extraction; minority carrier lifetime; surface recombination; transient photoconductive decay; Charge carrier lifetime; Charge carrier processes; Data mining; Equations; Photoconducting devices; Photoconductivity; Radiative recombination; Semiconductor devices; Spontaneous emission; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791640
