Title :
High-mobility Ga0.47In0.53As/InP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium
Author :
Usuda, M. ; Sato, K. ; Takeuchi, R. ; Onuma, K. ; Udagawa, T.
Author_Institution :
Showa Denko K.K. Chichibu Works, Saitama, Japan
Abstract :
Lattice matched Ga0.47In0.53As/InP heterostructure was grown by an atmospheric-pressure MOVPE reaction system using monovalent cyclopentadienyl indium (C5H5 In). The heterointerface characteristics were evaluated using double crystal X-ray diffraction method and wedge TEM technique. The reaction system gave Δa/a=2.95×10-4 accompanied by a smooth mirror-like surface. The abrupt Ga0.47In0.53 As/InP heterointerface was also given. The lattice matched heterostructure showed electron mobilities of μ300 K==12 700 cm2/Vs at ns,300 K=4.2×1011 cm-2 and μ77 K =108 000 cm2/Vs at n2,77 K=3.9×1011 cm-2
Keywords :
III-V semiconductors; X-ray diffraction; electron mobility; gallium arsenide; indium compounds; interface structure; semiconductor growth; semiconductor heterojunctions; transmission electron microscopy; vapour phase epitaxial growth; C5H5In; InP; abrupt Ga0.47In0.53As/InP heterointerface; atmospheric-pressure MOVPE; cyclopentadienyl indium; double crystal X-ray diffraction method; electron mobilities; heterointerface characteristics; high-mobility Ga0.47In0.53As/InP heterostructure; lattice matched Ga0.47In0.53As/InP heterostructure; smooth mirror-like surface; wedge TEM technique; Electron mobility; Epitaxial growth; Epitaxial layers; Gallium; Indium phosphide; Interference; Lattices; Optical surface waves; Surface morphology; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522274
