Title :
Super-high efficiency solar cell R&D program in Japan
Author :
Yamaguchi, Masafumi ; Wakamatsu, Seiji
Author_Institution :
Super-High Efficiency Compound Solar Cell Res., Toyota Technol. Inst., Nagoya, Japan
Abstract :
The R&D program of super-high efficiency solar cells, especially III-V compound semiconductor solar cells, in the New Sunshine Project of MITI (Ministry of International Trade and Industry) in Japan is described. In order to use III-V compound solar cells widely, it is necessary to improve their conversion efficiency and reduce their cost. Based on the above background, the Japanese R&D program of super-high efficiency solar cells started in FY (fiscal year) 1990 with support from MITI and NEDO. Up to now, InGaP/GaAs two-junction solar cells have reached the highest efficiency achieved in Japan of over 30%. By the end of the FY 1996, the authors hope an efficiency of 35% will be achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; project engineering; solar cells; III-V compound semiconductor; InGaP-GaAs; InGaP/GaAs two-junction solar cell; Japan; New Sunshine Project; conversion efficiency; solar cell R&D programme; super-high efficiency; Costs; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Photovoltaic cells; Photovoltaic systems; Production; Research and development; Solar power generation; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563936
