Title :
Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique
Author :
Tan, L.S. ; Huynh, F.N.L.
Author_Institution :
Microelectron. Lab., Nat. Univ. of Singapore, Singapore
Abstract :
An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress
Keywords :
carrier lifetime; minority carriers; surface photovoltage; analytical theory; minority carrier diffusion lengths; nonuniform carrier lifetimes; semiconductor wafers; surface photovoltage technique; Absorption; Charge carrier lifetime; Electrons; Equations; Laboratories; Microelectronics; Numerical simulation; Semiconductor materials; Substrates; Thyristors;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791651
