DocumentCode
3138923
Title
Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique
Author
Tan, L.S. ; Huynh, F.N.L.
Author_Institution
Microelectron. Lab., Nat. Univ. of Singapore, Singapore
fYear
1999
fDate
1999
Firstpage
318
Lastpage
321
Abstract
An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress
Keywords
carrier lifetime; minority carriers; surface photovoltage; analytical theory; minority carrier diffusion lengths; nonuniform carrier lifetimes; semiconductor wafers; surface photovoltage technique; Absorption; Charge carrier lifetime; Electrons; Equations; Laboratories; Microelectronics; Numerical simulation; Semiconductor materials; Substrates; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791651
Filename
791651
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