Title :
High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications
Author :
Wenas, Wilson W. ; Setiawan, A. ; Adriyanto, F. ; Sangian, H.
Author_Institution :
Semicond. Res. Lab., Inst. of Technol. Bandung, Indonesia
Abstract :
Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H2O and dimethylzinc/H2O reactant systems. The dimethylzinc/H2 O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 μm/h was obtained. The B2H6 was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B2H6 flow rate, the films with a sheet resistivity as low as 4 Ω/sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials
Keywords :
II-VI semiconductors; MOCVD coatings; electrical resistivity; semiconductor growth; semiconductor thin films; zinc compounds; 400 to 1000 nm; ZnO; device applications; diethylzinc/H2O; dimethylzinc/H2O; high growth rate transparent conducting ZnO film; high transmittance; metalorganic chemical vapor deposition; sheet resistivity; transparent conducting materials; Chemical vapor deposition; Conducting materials; Conductive films; Conductivity; MOCVD; Plasma temperature; Semiconductor thin films; Substrates; Transistors; Zinc oxide;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791652
