Title :
ARC for sub-0.18 /spl mu/m logic and gigabit DRAM frontend and backend processes
Author :
Lee, W.W. ; Qizhi He ; Chatterjee, A. ; Guoqiang Xing ; Brennan, B. ; Singh, A. ; Zielinski, E. ; Hanratty, M. ; Sunny Fang ; Rogers, D. ; Dixit, G. ; Carter, D. ; Luttmer, J.D. ; Havermann, B. ; Chapman, R.A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We have developed different Si/sub x/O/sub y/N/sub z/ antireflective coating (ARC) films for many different substrates for deep-UV lithography and implemented then into sub-0.18 /spl mu/m logic and Gigabit DRAM frontend and backend processes. The Si/sub x/O/sub y/N/sub z/ film has dual functions: reducing substrate reflectivity to a minimum, and serving as a hardmask for poly and metal etch. These properties of Si/sub x/O/sub y/N/sub z/ are crucial to tight CD control and fabrication of unique device structures. Plasma damage from ARC deposition is negligible. Using the designed Si/sub x/O/sub y/N/sub z/ and linewidth reduction etch, sub-0.1 /spl mu/m metal gate nMOSFETs are demonstrated. Backend sub-0.25 /spl mu/m multilevel metal patterning and etch with Si/sub x/O/sub y/N/sub z/ produce excellent metal profiles and 100% comb yield. A designed ARC also produces superior 1 Gigabit DRAM 0.16 /spl mu/m storage node contact patterning.
Keywords :
DRAM chips; MOSFET; antireflection coatings; integrated circuit interconnections; integrated logic circuits; masks; silicon compounds; sputter etching; ultraviolet lithography; 0.1 mum; 0.18 mum; 0.25 mum; 1 Gbit; ARC; CD control; Si/sub x/O/sub y/N/sub z/ antireflective coating; SiON; backend multilevel metal patterning; backend processes; comb yield; deep-UV lithography; fabrication; frontend processes; gigabit DRAM; hardmask; linewidth reduction etch; logic; metal etch; metal gate nMOSFETs; metal profiles; plasma damage; poly and metal etch; storage node contact patterning; substrate reflectivity; Coatings; Etching; Fabrication; Lithography; Logic; Optical films; Random access memory; Reflectivity; Semiconductor films; Substrates;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689210
