Title :
Noise characteristics of InP-based HBTs
Author :
Chen, Y.K. ; Humphrey, D.A. ; Fan, L. ; Lin, J. ; Hamm, R.A. ; Sivco, D. ; Cho, A.Y. ; Tate, A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The noise characteristics of InP-based heterostructure bipolar transistors (HBTs) are studied from low frequency to microwave frequency. The non-equilibrium minority carrier transport in the thin base region is very effective in reducing the 1/f noise current at low frequency as well as reducing the uncorrelated shot noise current at high frequency. Experimentally, a very low 1/f noise corner frequency of 1.55 kHz is obtained in AlInAs/InGaAs HBTs with a 70 nm-thick base. This is the lowest 1/f corner frequency amongst any compound semiconductor devices reported to date. Minimum noise figures of 0.46 dB, 2.0 dB and 3.33 dB are also demonstrated at 2 GHz, 10 GHz and 18 GHz, respectively, with InP/InGaAs HBTs with a 35 nm-thick base and 3.5 μm×3.5 μm emitter
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; minority carriers; semiconductor device noise; shot noise; 0.46 dB; 1.55 kHz; 1/f corner frequency; 1/f noise current; 10 GHz; 18 GHz; 2 GHz; 2.0 dB; 3.33 dB; 3.5 μm×3.5 μm emitter; 3.5 mum; 35 nm; 70 nm; AlInAs-InGaAs; AlInAs/InGaAs HBT; InP; InP-based HBT; InP-based heterostructure bipolar transistors; InP/InGaAs HBT; high frequency; low frequency to microwave frequency; noise characteristics; nonequilibrium minority carrier transport; thin base region; uncorrelated shot noise current; very low 1/f noise corner frequency; Bandwidth; Circuit noise; Cutoff frequency; FETs; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Noise figure; Noise generators; Semiconductor device noise;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522278
