• DocumentCode
    3138991
  • Title

    Magneto-plasmon modes in a semiconductor under intense terahertz laser radiation

  • Author

    Xu, W.

  • Author_Institution
    Dept. of Eng. Phys., Wollongong Univ., NSW, Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    333
  • Lastpage
    336
  • Abstract
    In this paper, we study theoretically how a linearly polarised intense laser field affects the magneto-plasmon modes in a semiconductor-based electron gas system. Using time-dependent condensed matter theory, we have obtained the electron density of states and the plasmon spectrum in the spectrum representation, and we have investigated the dependence of the magneto-plasmon excitation and the Fermi energy on frequency and intensity of the laser field and on magnetic field in GaAs material. The results are pertinent to the application of terahertz free-electron laser sources developed very recently
  • Keywords
    Fermi level; III-V semiconductors; electron gas; electronic density of states; free electron lasers; gallium arsenide; magnetic field effects; plasmons; Fermi energy; GaAs; electron density of states; electron gas; intense terahertz laser radiation; magneto-plasmon excitation; magneto-plasmon modes; plasmon spectrum; semiconductor; time-dependent condensed matter theory; Free electron lasers; Gas lasers; Laser excitation; Laser modes; Laser theory; Magnetic materials; Magnetic semiconductors; Plasmons; Polarization; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791655
  • Filename
    791655