DocumentCode
3138991
Title
Magneto-plasmon modes in a semiconductor under intense terahertz laser radiation
Author
Xu, W.
Author_Institution
Dept. of Eng. Phys., Wollongong Univ., NSW, Australia
fYear
1999
fDate
1999
Firstpage
333
Lastpage
336
Abstract
In this paper, we study theoretically how a linearly polarised intense laser field affects the magneto-plasmon modes in a semiconductor-based electron gas system. Using time-dependent condensed matter theory, we have obtained the electron density of states and the plasmon spectrum in the spectrum representation, and we have investigated the dependence of the magneto-plasmon excitation and the Fermi energy on frequency and intensity of the laser field and on magnetic field in GaAs material. The results are pertinent to the application of terahertz free-electron laser sources developed very recently
Keywords
Fermi level; III-V semiconductors; electron gas; electronic density of states; free electron lasers; gallium arsenide; magnetic field effects; plasmons; Fermi energy; GaAs; electron density of states; electron gas; intense terahertz laser radiation; magneto-plasmon excitation; magneto-plasmon modes; plasmon spectrum; semiconductor; time-dependent condensed matter theory; Free electron lasers; Gas lasers; Laser excitation; Laser modes; Laser theory; Magnetic materials; Magnetic semiconductors; Plasmons; Polarization; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791655
Filename
791655
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