DocumentCode :
3138991
Title :
Magneto-plasmon modes in a semiconductor under intense terahertz laser radiation
Author :
Xu, W.
Author_Institution :
Dept. of Eng. Phys., Wollongong Univ., NSW, Australia
fYear :
1999
fDate :
1999
Firstpage :
333
Lastpage :
336
Abstract :
In this paper, we study theoretically how a linearly polarised intense laser field affects the magneto-plasmon modes in a semiconductor-based electron gas system. Using time-dependent condensed matter theory, we have obtained the electron density of states and the plasmon spectrum in the spectrum representation, and we have investigated the dependence of the magneto-plasmon excitation and the Fermi energy on frequency and intensity of the laser field and on magnetic field in GaAs material. The results are pertinent to the application of terahertz free-electron laser sources developed very recently
Keywords :
Fermi level; III-V semiconductors; electron gas; electronic density of states; free electron lasers; gallium arsenide; magnetic field effects; plasmons; Fermi energy; GaAs; electron density of states; electron gas; intense terahertz laser radiation; magneto-plasmon excitation; magneto-plasmon modes; plasmon spectrum; semiconductor; time-dependent condensed matter theory; Free electron lasers; Gas lasers; Laser excitation; Laser modes; Laser theory; Magnetic materials; Magnetic semiconductors; Plasmons; Polarization; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
Type :
conf
DOI :
10.1109/COMMAD.1998.791655
Filename :
791655
Link To Document :
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