Interface stability of metal/InP based material systems

Author

Ashizawa, Y. ; Nozaki, C. ; Noda, T. ; Sasaki, A.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

861

Lastpage

869

Abstract

The stability of interfaces between metal (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry (RBS). Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be stable compared to those of Ni/In-based semiconductors and Ti/In-based semiconductors, respectively. Faster diffusion of Pt atoms was observed in In- and As- containing materials than in P-containing materials. Mo/semiconductors were most stable

Keywords

III-V semiconductors; Rutherford backscattering; chemical interdiffusion; indium compounds; interface structure; molybdenum; nickel; platinum; semiconductor-metal boundaries; titanium; 500 degC; III-V compound semiconductors; InP; Mo; Mo/semiconductors; Ni; Ni-GaAs; Ni/GaAs; Ni/In-based semiconductors; Pt; Pt atoms; RBS; Rutherford backscattering spectrometry; Ti; Ti-GaAs; Ti/GaAs; Ti/In-based semiconductors; annealing; f_aster diffusion; interface stability; interfacial lattice disorder; metal diffusion; metal/InP based material systems; metal/semiconductor samples; Annealing; Backscatter; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Inorganic materials; Lattices; Semiconductor materials; Spectroscopy; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522280

Filename

522280