High quality InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells

InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In_0.7Ga_0.3As_0.68P_0.32 shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f_As/(f_As+f_p). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities