Observation of state filling effects in the carrier dynamics of self-assembled quantum dots

Author

Herz, L.M. ; Dao, L.V. ; Johnston, M.B. ; Gal, M. ; Jagadish, C.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

1999

fDate

1999

Firstpage

344

Lastpage

347

Abstract

The time-resolved photoluminescence technique of picosecond excitation correlation has been applied to self-assembled InGaAs quantum dots grown in the Stranski-Krastanow mode. The nonlinear cross-correlation signal is shown to be due to filling of the quantum dot ground state causing an increase in recombination from the first excited state with increasing carrier density. Carrier relaxation times and radiative as well as non-radiative recombination times for the ground and the first excited state of the quantum dot system are determined using a model based on state filling effect

Keywords

III-V semiconductors; carrier density; carrier relaxation time; excited states; gallium arsenide; ground states; indium compounds; interface states; photoluminescence; self-assembly; semiconductor quantum dots; surface recombination; time resolved spectra; InGaAs; Stranski-Krastanow mode; carrier dynamics; carrier relaxation times; first excited state; increasing carrier density; nonlinear cross-correlation signal; nonradiative recombination; picosecond excitation correlation; quantum dot ground state; radiative recombination; recombination; self-assembled quantum dots; state filling effect; state filling effects; time-resolved photoluminescence; Charge carrier density; Filling; Laser beams; Lead compounds; Phonons; Photoluminescence; Quantum dots; Radiative recombination; Stationary state; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791658

Filename

791658