Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation

Author

Fu, L. ; Tan, H.H. ; Jagadish, C. ; Johnston, M.B. ; Gal, M.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1999

fDate

1999

Firstpage

355

Lastpage

357

Abstract

As and H irradiation with subsequent thermal annealing were used to investigate the intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells (QWs). Large photoluminescence (PL) energy shifts were observed in both materials, Due to dynamic annealing in AlGaAs and the presence of Al in the barriers, the InGaAs/AlGaAs samples showed better PL intensities recovery and larger energy shifts than the InGaAs/GaAs samples after both As and H irradiation. Larger energy shifts were obtained for As irradiation at lower doses than when compared to H irradiation, However, at higher doses H irradiation resulted in higher energy shift than As irradiation, Results of the effect of irradiation temperature showed that higher shift could be obtained with increasing temperature for As irradiation at lower doses while for H irradiation, implant temperature had little effect

Keywords

III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; ion beam effects; photoluminescence; semiconductor quantum wells; surface diffusion; As; As irradiation; H; H irradiation; InAs-AlGaAs; InGaAs/(Al)GaAs; dynamic annealing; implant temperature; large photoluminescence energy shifts; quantum well intermixing; thermal annealing; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Ion implantation; Photoluminescence; Physics; Power engineering and energy; Rapid thermal annealing; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791661

Filename

791661