Title :
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Author :
Zou, J. ; Cai, D.Q. ; Cockayne, D.J.H. ; Yuan, S. ; Jagadish, C.
Author_Institution :
Key Centre for Microscopy & Microanalysis, Sydney Univ., NSW, Australia
Abstract :
In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; surface diffusion; transmission electron microscopy; Al profiles; GaAs-AlGaAs; TEM measurement; interdiffused GaAs/AlGaAs quantum-wells; thickness fringe imaging technique; Electron microscopy; Gallium arsenide; High-resolution imaging; Quantum well lasers; Quantum wells; Semiconductor lasers; Semiconductor superlattices; Shape; Transmission electron microscopy; Waveguide lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791662
