Title :
Synthesis of nanocrystal GaN powders by mechanochemical reaction
Author :
Cai, S. ; Tsuzuki, T. ; Fisher, T.A. ; McCormick, P.G.
Author_Institution :
Special Res. Center for Adv. Miner. & Mater. Proc., Western Australia Univ., Nedlands, WA, Australia
Abstract :
The synthesis of nanocrystal GaN by mechanochemical reaction was studied by X-ray diffraction, transmission electron microscopy, selected area electron diffraction and optical absorption. The solid state displacement reaction of Ga2O3+Mg3N2→2GaN+3MgO was induced by mechanical milling. Nanocrystal hexagonal GaN with an average size of 11.4 nm was obtained through subsequent annealing and removal of the by-product through washing. Optical absorption showed the bandgap of the sample is consistent with that of bulk GaN sample
Keywords :
III-V semiconductors; X-ray diffraction; annealing; electron diffraction; energy gap; gallium compounds; light absorption; nanostructured materials; optical constants; particle size; powder technology; reaction kinetics; transmission electron microscopy; wide band gap semiconductors; 11.4 nm; Ga2O3; GaN; Mg3N2; MgO; X-ray diffraction; annealing; average size; bandgap; by-product; mechanical milling; mechanochemical reaction; nanocrystal GaN powders; nanocrystal hexagonal GaN; optical absorption; selected area electron diffraction; solid state displacement reaction; synthesis; transmission electron microscopy; washing; Electromagnetic wave absorption; Electron optics; Gallium nitride; Nanocrystals; Optical diffraction; Optical microscopy; Powders; Solid state circuits; Transmission electron microscopy; X-ray diffraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791673
