Photoluminescence from higher-subbands of GaAs/AlAs superlattices

Author

Domoto, Chiaki ; Ohtani, Naoki ; Vaccaro, Pablo O.

Author_Institution

ATR Adaptive Commun. Res. Labs., Kyoto, Japan

fYear

1999

fDate

1999

Firstpage

415

Lastpage

418

Abstract

We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to Γ1(+1)-Γ3(0) and X1(+1/2)-Γ3(0) resonance. The intensity of Γ3-hh1 PL due to X1(+1/2)-Γ3(0) resonance is found to be approximately two times stronger than that due to Γ1(+1)-Γ3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the Γ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure

Keywords

III-V semiconductors; aluminium compounds; charge injection; gallium arsenide; interface states; photoluminescence; semiconductor superlattices; Γ subband; GaAs-AlAs; GaAs/AlAs superlattices; X subband; electron injection; higher-subbands; photoluminescence; quantum cascade laser structure; resonance; Chemical lasers; Electrons; Fiber lasers; Gallium arsenide; Laser sintering; Photoluminescence; Quantum cascade lasers; Resonance; Superlattices; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791677

Filename

791677