Title :
The effects of depletion layer recombination in polycrystalline photovoltaic devices under illumination
Author :
Hinckley, Steven ; Gluszak, Edward A.
Author_Institution :
Center for Very High Speed Microelectron., Edith Cowan Univ., Joondalup, WA, Australia
Abstract :
The flux method has been used to simulate the effect of depletion layer and grain boundary recombination on the performance of polycrystalline semiconductor photovoltaic devices under solar illumination. Results are presented for a polycrystalline n+-p silicon homojunction solar cell, and an n+-p CdS/CuInSe2 heterojunction solar cell
Keywords :
cadmium compounds; electron-hole recombination; elemental semiconductors; grain boundaries; indium compounds; semiconductor device models; silicon; solar cells; ternary semiconductors; CdS-CuInSe2; Si; depletion layer recombination; flux method; grain boundary recombination; heterojunction solar cell; homojunction solar cell; polycrystalline photovoltaic devices; solar illumination; Analytical models; Conductors; Grain boundaries; Lighting; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Scattering parameters; Semiconductor devices; Solar power generation;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791681
