• DocumentCode
    3139425
  • Title

    The effects of depletion layer recombination in polycrystalline photovoltaic devices under illumination

  • Author

    Hinckley, Steven ; Gluszak, Edward A.

  • Author_Institution
    Center for Very High Speed Microelectron., Edith Cowan Univ., Joondalup, WA, Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    430
  • Lastpage
    433
  • Abstract
    The flux method has been used to simulate the effect of depletion layer and grain boundary recombination on the performance of polycrystalline semiconductor photovoltaic devices under solar illumination. Results are presented for a polycrystalline n+-p silicon homojunction solar cell, and an n+-p CdS/CuInSe2 heterojunction solar cell
  • Keywords
    cadmium compounds; electron-hole recombination; elemental semiconductors; grain boundaries; indium compounds; semiconductor device models; silicon; solar cells; ternary semiconductors; CdS-CuInSe2; Si; depletion layer recombination; flux method; grain boundary recombination; heterojunction solar cell; homojunction solar cell; polycrystalline photovoltaic devices; solar illumination; Analytical models; Conductors; Grain boundaries; Lighting; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Scattering parameters; Semiconductor devices; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791681
  • Filename
    791681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3139425