Surface morphology of metalorganic vapor phase epitaxy grown GaAs, GaInP for heterojunction bipolar transistor applications with nitrogen as the carrier gas

Author

Hsu, C.C. ; Xu, J.B.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong

fYear

1999

fDate

1999

Firstpage

434

Lastpage

437

Abstract

The MOCVD growth of GaAs, GaInP for heterojunction bipolar transistor (HBT) applications was carried out in a horizontal low pressure reactor. Nitrogen was used as the carrier gas. After growth, the samples were examined using an atomic force microscope (AFM). Monolayer steps were observed on the GaAs surface. The growth mechanism is the step flow mode according to the BCF theory. The step width varies between 25 nm and 240 nm, which is determined by the growth conditions. The step width decreases with lower growth temperature and higher growth rate. Monolayer steps were also observed on the GaInP surface

Keywords

III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface structure; vapour phase epitaxial growth; AFM; GaAs; GaInP-GaAs; MOCVD; growth rate; growth temperature; heterojunction bipolar transistor; horizontal low pressure reactor; monolayer steps; nitrogen carrier gas; step flow growth mode; surface morphology; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Inductors; MOCVD; Nitrogen; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791682

Filename

791682