Title :
High-power and high-efficiency GaN HEMT amplifiers
Author :
Joshin, Kazukiyo ; Kikkawa, Toshihide
Author_Institution :
Fujitsu Ltd., Atsugi
Abstract :
We report a current status of high-power GaN HEMTs for high-power and high-efficiency amplifiers with higher efficiency by 5% especially at a backed-off region than the conventional GaN HEMTs. First, we introduce our specific device structure GaN HEMT with dispersion-free I-V characteristics, low Idsq-drift and high reliability. Record average drain efficiency of over 50% and linear gain of 17.2 dB were obtained at an output power of 45 dBm and 2.5 GHz. Next, we discuss their reliability with high-temperature life tests resulting in their estimated life of over 1 times 106 hours at Tj of 200degC. Finally, we describe the next generation GaN HEMTs for millimeter-wave applications.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT amplifiers; dispersion-free I-V characteristics; efficiency 5 percent; frequency 2.5 GHz; gain 17.2 dB; high-efficiency amplifiers; high-power amplifiers; high-temperature life tests; temperature 200 degC; Buffer layers; Gain; Gallium nitride; HEMTs; High power amplifiers; Millimeter wave communication; Millimeter wave radar; Power amplifiers; Power generation; Silicon compounds; HEMT; millimeter wave; power amplifiers;
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
DOI :
10.1109/RWS.2008.4463429
