DocumentCode
3139497
Title
Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications
Author
van Rijs, F.
Author_Institution
NXP Semicond., Nijmegen
fYear
2008
fDate
22-24 Jan. 2008
Firstpage
69
Lastpage
72
Abstract
LDMOS technology is the main power amplifier technology used for cellular base stations for frequencies up to 2.14 GHz. With the latest LDMOS technology generations it is however possible, and demonstrated, to use LDMOS for frequencies up to 3.8 GHz. This paper describes the status and trends of LDMOS technology for wireless applications beyond 2.5 GHz.go beyond 2.5 GHz applications.
Keywords
cellular radio; microwave power amplifiers; power MOSFET; silicon; LDMOS base station; MOSFET power amplifier; cellular base station; frequency 2.5 GHz; microwave power FET amplifier; Base stations; CMOS technology; Capacitance; Cutoff frequency; MOSFETs; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation; Silicon; MOSFET power amplifiers; MOSdevices; microwave power FET amplifiers; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium, 2008 IEEE
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1462-8
Electronic_ISBN
978-1-4244-1463-5
Type
conf
DOI
10.1109/RWS.2008.4463430
Filename
4463430
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