Title :
An X-band 250W solid-state power amplifier using GaN power HEMTs
Author :
Kanto, Kazuhiro ; Satomi, Akihiro ; Asahi, Yasuaki ; Kashiwabara, Yasushi ; Matsushita, Keiichi ; Takagi, Kazutaka
Author_Institution :
Toshiba Corp., Kawasaki
Abstract :
More than 250 W of peak output power (pulse width 64 mus, duty cycle 7%) is achieved with newly developed X-band solid-state power amplifier. The final stage of the SSPA consists of four 80 W class GaN power HEMTs and a low loss 4-way combiner. Compared with the conventional klystron tubes, our newly developed SSPAs are smaller, more reliable and require less amounts of occupied frequency bandwidth.
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power amplifiers; power HEMT; wide band gap semiconductors; 4-way combiner; GaN; X-band solid-state power amplifier; peak output power; power 250 W; power HEMT; Frequency; Gallium nitride; HEMTs; Klystrons; MODFETs; Power amplifiers; Power generation; Pulse amplifiers; Solid state circuits; Space vector pulse width modulation; GaN HEMT; Solid-State Power Amplifier; X-band;
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
DOI :
10.1109/RWS.2008.4463432
