Title :
High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT
Author :
Liu, W.C. ; Chang, W.L. ; Chen, J.Y. ; Yu, K.H. ; Feng, S.C. ; Yan, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
High-breakdown and high-linearity Ga0.51In0.49 P/In0.15Ga0.85As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device breakdown; wide band gap semiconductors; Ga0.51In0.49P-In0.15Ga0.85 As; Schottky contact layer; gate-to-drain breakdown voltage; microwave power applications; output current density; pseudomorphic HEMT; transconductance; Current density; Cutoff frequency; Gallium arsenide; HEMTs; MODFETs; Microwave devices; PHEMTs; Schottky barriers; Temperature; Transconductance;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791688
