RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip

Author

Momose, H.S. ; Fujimoto, R. ; Otaka, S. ; Morifuji, E. ; Ohguro, T. ; Yoshitomi, T. ; Kimijima, H. ; Nakamura, S. ; Morimoto, T. ; Katsumata, Y. ; Tanimoto, H. ; Iwai, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1998

fDate

9-11 June 1998

Firstpage

96

Lastpage

97

Abstract

Recently, direct tunneling gate oxide MOSFETs have shown the potential of enabling extremely high RF performance in analog applications. An excellent cutoff frequency of more than 150 GHz was reported at a gate length of less than 0.1 /spl mu/m. In this paper, RF noise characteristics of the MOSFETs are reported in detail. The gate oxide thickness and supply voltage dependencies were investigated. In addition, NMOS LNA (low noise amplifier) circuits made with 1.5 nm gate oxide MOSFETs were evaluated for the first time. Good RF analog circuit operation with very low noise and high gain was confirmed.

Keywords

MOS analogue integrated circuits; MOSFET; integrated circuit noise; millimetre wave amplifiers; millimetre wave integrated circuits; semiconductor device noise; 0.1 mum; 1.5 nm; 150 GHz; NMOS LNA circuit; RF analog circuit operation; RF noise; RF noise characteristics; Si-SiO/sub 2/; analog applications; chip; cutoff frequency; direct tunneling gate oxide MOSFETs; gate length; gate oxide MOSFETs; gate oxide thickness; high RF performance; high gain; low noise; low noise amplifier circuits; supply voltage dependencies; Analog circuits; Circuit noise; Cutoff frequency; Low-noise amplifiers; MOS devices; MOSFETs; Radio frequency; Radiofrequency amplifiers; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689214

Filename

689214