Title :
Using a CMOS ASIC technology for the development of an integrated ISFET sensor
Author :
Dzahini, K. ; Gaffiot, F. ; Le Helley, M.
Author_Institution :
Lab. d´´Electron., Autom., Mesures Electr., CNRS, Ecole Centrale de Lyon, Ecully, France
Abstract :
To take advantage of microelectronics, attempts have been made to integrate sensors in silicon and furthermore to accommodate the whole system formed of the sensor and its signal processing circuit. The major problem is the compatibility between both processes: elaboration of the sensor and integration of the measurement circuit. In this paper the authors present a method allowing industrial production of integrated ISFET sensor. An ASIC CMOS line is used to integrate the signal processing circuit; then the sensor is fabricated by a specific process that does not alter the function of the circuit.<>
Keywords :
CMOS integrated circuits; application specific integrated circuits; chemical sensors; electric sensing devices; insulated gate field effect transistors; integrated circuit manufacture; CMOS ASIC technology; industrial production; integrated ISFET sensor; signal processing circuit; Application specific integrated circuits; CMOS process; CMOS technology; Integrated circuit measurements; Integrated circuit technology; Microelectronics; Production; Sensor systems; Signal processing; Silicon;
Conference_Titel :
Euro ASIC '91
Conference_Location :
Paris, France
Print_ISBN :
0-8186-2185-0
DOI :
10.1109/EUASIC.1991.212837
