Using a CMOS ASIC technology for the development of an integrated ISFET sensor

Author

Dzahini, K. ; Gaffiot, F. ; Le Helley, M.

Author_Institution

Lab. d´´Electron., Autom., Mesures Electr., CNRS, Ecole Centrale de Lyon, Ecully, France

fYear

1991

fDate

27-31 May 1991

Firstpage

356

Lastpage

359

Abstract

To take advantage of microelectronics, attempts have been made to integrate sensors in silicon and furthermore to accommodate the whole system formed of the sensor and its signal processing circuit. The major problem is the compatibility between both processes: elaboration of the sensor and integration of the measurement circuit. In this paper the authors present a method allowing industrial production of integrated ISFET sensor. An ASIC CMOS line is used to integrate the signal processing circuit; then the sensor is fabricated by a specific process that does not alter the function of the circuit.<>

Keywords

CMOS integrated circuits; application specific integrated circuits; chemical sensors; electric sensing devices; insulated gate field effect transistors; integrated circuit manufacture; CMOS ASIC technology; industrial production; integrated ISFET sensor; signal processing circuit; Application specific integrated circuits; CMOS process; CMOS technology; Integrated circuit measurements; Integrated circuit technology; Microelectronics; Production; Sensor systems; Signal processing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Euro ASIC '91

Conference_Location

Paris, France

Print_ISBN

0-8186-2185-0

Type

conf

DOI

10.1109/EUASIC.1991.212837

Filename

212837