• DocumentCode
    3139806
  • Title

    Hidden but important parameters in Ga0.5In0.5P cell growth

  • Author

    Kurtz, Sarah R. ; Olson, J.M. ; Bertness, K.A. ; Sinha, K. ; McMahon, B. ; Asher, S.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    37
  • Lastpage
    42
  • Abstract
    Despite their best intentions, authors often omit from publications many important technical details. These omissions can lead to contradictions in the literature and inhibit researchers´ abilities to duplicate published results. Here, the authors explore “hidden” parameters that are usually not reported, either because they are unknown (e.g., impurity levels) or because they are considered to be of little importance. Specifically, they focus on the effects-and how to reduce the effects-of growth parameters in nearby layers (diffusion), impurities (oxygen) and the cool-down atmosphere (hydrogen passivation)
  • Keywords
    diffusion; gallium compounds; indium compounds; passivation; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; Ga0.5In0.5P; Ga0.5In0.5P solar cells; cool-down atmosphere; diffusion; growth parameters; hidden parameters; hydrogen passivation; impurities; impurity levels; semiconductor; technical details; Current measurement; Doping; Electrical resistance measurement; Etching; Government; Indium phosphide; Protection; Reflection; Transmission line measurements; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.563941
  • Filename
    563941