DocumentCode
3139806
Title
Hidden but important parameters in Ga0.5In0.5P cell growth
Author
Kurtz, Sarah R. ; Olson, J.M. ; Bertness, K.A. ; Sinha, K. ; McMahon, B. ; Asher, S.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1996
fDate
13-17 May 1996
Firstpage
37
Lastpage
42
Abstract
Despite their best intentions, authors often omit from publications many important technical details. These omissions can lead to contradictions in the literature and inhibit researchers´ abilities to duplicate published results. Here, the authors explore “hidden” parameters that are usually not reported, either because they are unknown (e.g., impurity levels) or because they are considered to be of little importance. Specifically, they focus on the effects-and how to reduce the effects-of growth parameters in nearby layers (diffusion), impurities (oxygen) and the cool-down atmosphere (hydrogen passivation)
Keywords
diffusion; gallium compounds; indium compounds; passivation; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; Ga0.5In0.5P; Ga0.5In0.5P solar cells; cool-down atmosphere; diffusion; growth parameters; hidden parameters; hydrogen passivation; impurities; impurity levels; semiconductor; technical details; Current measurement; Doping; Electrical resistance measurement; Etching; Government; Indium phosphide; Protection; Reflection; Transmission line measurements; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.563941
Filename
563941
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