Title :
Photomodulation spectroscopy of Zn δ-doped GaAs
Author :
Dou, Hongfei ; Lu, Wei ; Chen, Xiaoshuang ; Ning Li ; Shen, S.C. ; Li, G. ; Jagadish, C. ; Fu, Y. ; Willander, Magnus
Author_Institution :
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
Abstract :
Zn δ-doped GaAs was investigated by photomodulation spectroscopy. At the high-energy side of the fundamental band gap of GaAs, two transitions were observed, The potential and energy structure of Zn δ-doped GaAs were calculated self-consistently using effective mass approximation. The absorption coefficient of Zn δ-doped GaAs and its differential were also calculated. The energy positions of transitions from the first level of heavy and light holes are obtained respectively, The experimental and calculated results are in good agreement
Keywords :
III-V semiconductors; effective mass; energy gap; gallium arsenide; impurity absorption spectra; impurity states; modulation spectra; visible spectra; zinc; δ-doped GaAs:Zn; GaAs:Zn; absorption coefficient; effective mass approximation; energy structure; fundamental band gap; heavy holes; light holes; photomodulation spectroscopy; potential; Absorption; Effective mass; Electrons; Epitaxial growth; Gallium arsenide; Photonic band gap; Physics; Semiconductor device doping; Spectroscopy; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791707
