Photomodulation spectroscopy of Zn δ-doped GaAs

Author

Dou, Hongfei ; Lu, Wei ; Chen, Xiaoshuang ; Ning Li ; Shen, S.C. ; Li, G. ; Jagadish, C. ; Fu, Y. ; Willander, Magnus

Author_Institution

Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China

fYear

1999

fDate

1999

Firstpage

519

Lastpage

521

Abstract

Zn δ-doped GaAs was investigated by photomodulation spectroscopy. At the high-energy side of the fundamental band gap of GaAs, two transitions were observed, The potential and energy structure of Zn δ-doped GaAs were calculated self-consistently using effective mass approximation. The absorption coefficient of Zn δ-doped GaAs and its differential were also calculated. The energy positions of transitions from the first level of heavy and light holes are obtained respectively, The experimental and calculated results are in good agreement

Keywords

III-V semiconductors; effective mass; energy gap; gallium arsenide; impurity absorption spectra; impurity states; modulation spectra; visible spectra; zinc; δ-doped GaAs:Zn; GaAs:Zn; absorption coefficient; effective mass approximation; energy structure; fundamental band gap; heavy holes; light holes; photomodulation spectroscopy; potential; Absorption; Effective mass; Electrons; Epitaxial growth; Gallium arsenide; Photonic band gap; Physics; Semiconductor device doping; Spectroscopy; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791707

Filename

791707