DocumentCode
3139902
Title
Comprehensive study on AC characteristics in SOI MOSFETs for analog applications
Author
Tseng, Y.-C. ; Huang, T.M. ; Monk, T. ; Diaz, T. ; Ford, T.M. ; Woo, J.C.S.
Author_Institution
Dept. of Electr. Eng., California State Univ., Los Angeles, CA, USA
fYear
1998
fDate
9-11 June 1998
Firstpage
112
Lastpage
113
Abstract
We report an extensive investigation of the AC characteristics of SOI MOSFETs in order to assess the suitability of different SOI device designs for analog applications. The geometry dependence of body discharging paths as well as the relevant AC floating body effects are addressed.
Keywords
MOSFET; harmonic distortion; semiconductor device measurement; semiconductor device noise; silicon-on-insulator; AC characteristics; SOI MOSFET; analog application; body discharging path; floating body effect; harmonic distortion; low frequency noise; CMOS memory circuits; Contact resistance; Diodes; Fault location; Frequency dependence; Geometry; Immune system; MOS devices; MOSFETs; Partial discharges;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689221
Filename
689221
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