Title :
Monolithically interconnected InGaAs TPV module development
Author :
Wilt, David M. ; Fatemi, Navid S. ; Jenkins, Phillip P. ; Hoffman, Richard W., Jr. ; Landis, Geoffrey A. ; Jain, Raj K.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
This paper describes the status of development of an indium gallium arsenide (InGaAs) monolithically-interconnected module (MIM) for thermophotovoltaic (TPV) energy conversion applications. The MIM structure features series interconnected InGaAs sub-cells on an insulating indium phosphide (InP) substrate, with a rear-surface infrared (IR) reflector. Motivations for developing the MIM structure include: reduced resistive losses; higher output power density; improved thermal coupling; and, ultimately, higher system efficiency. An optical model has been developed, free carrier absorption coefficients have been measured and a prototype MIM device has been demonstrated. A rear surface IR reflector has been developed with ~98% reflectance in the sub-bandgap (>1.7 μm) region
Keywords :
gallium arsenide; indium compounds; photovoltaic cells; semiconductor device models; semiconductor device testing; solar cells; InGaAs-InP; InGaAs/InP thermophotovoltaic cells; TPV module development; free carrier absorption coefficients; monolithic interconnection; output power density; performance measurements; performance modelling; rear surface IR reflector; resistive losses; sub-bandgap region; thermal coupling; Energy conversion; Indium gallium arsenide; Indium phosphide; Insulation; Optical devices; Optical interconnections; Optical losses; Power generation; Power system interconnection; Thermal resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563942
