Monolithically interconnected InGaAs TPV module development

Author

Wilt, David M. ; Fatemi, Navid S. ; Jenkins, Phillip P. ; Hoffman, Richard W., Jr. ; Landis, Geoffrey A. ; Jain, Raj K.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

43

Lastpage

48

Abstract

This paper describes the status of development of an indium gallium arsenide (InGaAs) monolithically-interconnected module (MIM) for thermophotovoltaic (TPV) energy conversion applications. The MIM structure features series interconnected InGaAs sub-cells on an insulating indium phosphide (InP) substrate, with a rear-surface infrared (IR) reflector. Motivations for developing the MIM structure include: reduced resistive losses; higher output power density; improved thermal coupling; and, ultimately, higher system efficiency. An optical model has been developed, free carrier absorption coefficients have been measured and a prototype MIM device has been demonstrated. A rear surface IR reflector has been developed with ~98% reflectance in the sub-bandgap (>1.7 μm) region

Keywords

gallium arsenide; indium compounds; photovoltaic cells; semiconductor device models; semiconductor device testing; solar cells; InGaAs-InP; InGaAs/InP thermophotovoltaic cells; TPV module development; free carrier absorption coefficients; monolithic interconnection; output power density; performance measurements; performance modelling; rear surface IR reflector; resistive losses; sub-bandgap region; thermal coupling; Energy conversion; Indium gallium arsenide; Indium phosphide; Insulation; Optical devices; Optical interconnections; Optical losses; Power generation; Power system interconnection; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563942

Filename

563942