• DocumentCode
    3139996
  • Title

    GaAs technology status and perspectives for multi-band and multi-standard challenges in upcoming RF-frontends

  • Author

    Zampardi, Peter J.

  • Author_Institution
    Skyworks Solutions Inc, Newbury Park
  • fYear
    2008
  • fDate
    22-24 Jan. 2008
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    GaAs HBT technologies currently dominate the wireless handset marketplace due to their proven RF performance, time-to-market, and size advantages compared to other technologies. As with any technology, new customer specifications and requirements drive the development of next generation processes. Some of the challenging customer requirements that will be, or already are, part of the future of handset power amplifiers are lower end-of-life battery voltage, lower/no reference voltage, improved mid-power efficiency performance, and the increasing number of band/modes used in the phone.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; time to market; GaAs; HBT technologies; RF-frontends; customer requirements; customer specification; handset power amplifiers; time-to-market; Batteries; Circuit synthesis; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Low voltage; Power amplifiers; Radio frequency; Telephone sets; Front-End Modules; HBT; III-V Technologies; Power Amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium, 2008 IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1462-8
  • Electronic_ISBN
    978-1-4244-1463-5
  • Type

    conf

  • DOI
    10.1109/RWS.2008.4463460
  • Filename
    4463460