DocumentCode
3139996
Title
GaAs technology status and perspectives for multi-band and multi-standard challenges in upcoming RF-frontends
Author
Zampardi, Peter J.
Author_Institution
Skyworks Solutions Inc, Newbury Park
fYear
2008
fDate
22-24 Jan. 2008
Firstpage
187
Lastpage
190
Abstract
GaAs HBT technologies currently dominate the wireless handset marketplace due to their proven RF performance, time-to-market, and size advantages compared to other technologies. As with any technology, new customer specifications and requirements drive the development of next generation processes. Some of the challenging customer requirements that will be, or already are, part of the future of handset power amplifiers are lower end-of-life battery voltage, lower/no reference voltage, improved mid-power efficiency performance, and the increasing number of band/modes used in the phone.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; time to market; GaAs; HBT technologies; RF-frontends; customer requirements; customer specification; handset power amplifiers; time-to-market; Batteries; Circuit synthesis; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Low voltage; Power amplifiers; Radio frequency; Telephone sets; Front-End Modules; HBT; III-V Technologies; Power Amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium, 2008 IEEE
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1462-8
Electronic_ISBN
978-1-4244-1463-5
Type
conf
DOI
10.1109/RWS.2008.4463460
Filename
4463460
Link To Document