DocumentCode :
3139996
Title :
GaAs technology status and perspectives for multi-band and multi-standard challenges in upcoming RF-frontends
Author :
Zampardi, Peter J.
Author_Institution :
Skyworks Solutions Inc, Newbury Park
fYear :
2008
fDate :
22-24 Jan. 2008
Firstpage :
187
Lastpage :
190
Abstract :
GaAs HBT technologies currently dominate the wireless handset marketplace due to their proven RF performance, time-to-market, and size advantages compared to other technologies. As with any technology, new customer specifications and requirements drive the development of next generation processes. Some of the challenging customer requirements that will be, or already are, part of the future of handset power amplifiers are lower end-of-life battery voltage, lower/no reference voltage, improved mid-power efficiency performance, and the increasing number of band/modes used in the phone.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; time to market; GaAs; HBT technologies; RF-frontends; customer requirements; customer specification; handset power amplifiers; time-to-market; Batteries; Circuit synthesis; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Low voltage; Power amplifiers; Radio frequency; Telephone sets; Front-End Modules; HBT; III-V Technologies; Power Amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
Type :
conf
DOI :
10.1109/RWS.2008.4463460
Filename :
4463460
Link To Document :
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