122 GHz ISM-band transceiver concept and silicon ICs for low-cost receiver in SiGe BiCMOS

Author

Schmalz, K. ; Winkler, W. ; Borngraber, Johannes ; Debski, W. ; Heinemann, B. ; Scheytt, J.C.

Author_Institution

IHP GmbH, Frankfurt (Oder), Germany

fYear

2010

fDate

23-28 May 2010

Firstpage

1332

Lastpage

1335

Abstract

A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255GHz/315GHz. Its differential down-conversion gain is 31 dB at 122 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 121 GHz to 124 GHz. The input 1-dB compression point is at -44 dBm. The receiver consumes 113 mA at a supply voltage of 3.2 V.

Keywords

CMOS integrated circuits; germanium compounds; silicon compounds; transceivers; transcoding; BiCMOS technology; ISM-band transceiver; SiGe; bandwidth 121 GHz to 124 GHz; frequency 122 GHz; frequency 255 GHz; frequency 315 GHz; gain 31 dB; low-cost receiver; polyphase filter; subharmonic transceiver; Bandwidth; BiCMOS integrated circuits; Filters; Gain; Germanium silicon alloys; Noise figure; Silicon germanium; Transceivers; Voltage; Voltage-controlled oscillators; 122 GHz; LNA; SiGe technology; VCO; millimeter-wave circuits; sub-harmonic receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5517447

Filename

5517447