High precision SPICE models for the simulation of analogue CMOS circuits

Enhanced SPICE models are developed for the simulation of analogue CMOS circuits. The well resistor model describes the voltage, geometry and temperature dependence of the resistance which is crucial for the characterization of a bandgap reference circuit. The single-operating-region MOS model uses electrically effective voltages for increased accuracy and continuity of the derivatives. It forms the basis of the lateral bipolar transistor model which includes the simulation of the MOS-to-bipolar transition region for optional gate voltages.<>