Thin film GaAs solar cells on glass substrates by epitaxial liftoff

Author

Lee, X.Y. ; Verma, Ashish K. ; Wu, Charles Q. ; Goertemiller, Mark ; Yablonovitch, Eli ; Eldredge, Jack ; Lillington, David

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

53

Lastpage

55

Abstract

In this work, the authors describe the fabrication and operating characteristics of GaAs/AlGaAs thin-film solar cells using the epitaxial liftoff (ELO) technique. This technique allows the transfer of these solar cells onto nonabsorbing glass substrates, and makes possible light-trapping operation. The enhanced performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions

Keywords

aluminium compounds; epitaxial growth; gallium arsenide; gallium compounds; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; substrates; GaAs-AlGaAs; GaAs/AlGaAs thin-film solar cells; dark conditions; electrical measurements; epitaxial liftoff; fabrication; illuminated conditions; light-trapping operation; nonabsorbing glass substrates; operating characteristics; performance enhancement; semiconductor; Electric variables measurement; Etching; Fabrication; Gallium arsenide; Glass; Photovoltaic cells; Space technology; Substrates; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563944

Filename

563944