DocumentCode
31404
Title
Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass
Author
Granata, Stefano N. ; Aleman, Monica ; Bearda, T. ; Govaerts, Jonathan ; Brizzi, Mariella ; Abdulraheem, Yaser ; Gordon, I. ; Poortmans, Jozef ; Mertens, Robert
Author_Institution
IMEC, Leuven, Belgium
Volume
4
Issue
3
fYear
2014
fDate
May-14
Firstpage
807
Lastpage
813
Abstract
Future wafer-based silicon solar cells will be fabricated on thin (<;140 μm) wafers. However, technologies to handle thin wafers during cell processing are not yet available for industry. In this paper, a flow to handle thin wafers during rear side cell processing is developed and demonstrated on 4-in 200 μm-thick wafers. The flow involves bonding the wafers to glass after front-side processing followed by a low-temperature p-n heterojunction formation on the rear side. 2.5 × 2.5 cm2 amorphous/crystalline silicon heterojunction interdigitated back-contact solar cells are fabricated by use of lithography while bonded to glass, and they show an efficiency of up to 17.7%. Shunts, infrared light absorption, and rear side interface passivation are identified as the main efficiency losses. Dedicated experiments suggest that the passivation losses are related to the degradation of the adhesive during wafer cleaning. Hence, methods to improve the compatibility of the adhesive with the cleaning process are discussed.
Keywords
adhesives; amorphous state; cleaning; elemental semiconductors; infrared spectra; lithography; p-n heterojunctions; passivation; silicon; solar cells; Si; adhesive degradation; amorphous-crystalline silicon heterojunction interdigitated back-contact solar cells; bonded wafers; front- side processing; heterojunction interdigitated back-contact solar cell fabrication; infrared light absorption; lithography; low-temperature p-n heterojunction formation; passivation losses; rear side cell processing; rear side interface passivation; thin wafers; wafer cleaning; wafer-based silicon solar cells fabrication; Annealing; Bonding; Glass; Indium tin oxide; Passivation; Photovoltaic cells; Silicon; Heterojunction silicon solar cells; interdigitated-back-contact (i-BC); superstrate processing;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2014.2307170
Filename
6766186
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