• DocumentCode
    3140404
  • Title

    A highly efficient 1-GHz, 15-W power amplifier design based on a 50-V LDMOS transistor

  • Author

    Singerl, Peter ; Fager, Christian ; Wang, Ziming ; Schuberth, Christian ; Dielacher, Franz

  • Author_Institution
    Infineon Technol. Austria AG, Villach, Austria
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1102
  • Lastpage
    1105
  • Abstract
    We present a 15-W, 1-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE) of 75%. The PA design is based on a packaged 50-V Si-LDMOS engineering sample. The PAE is maximized by an appropriate tuning of the fundamental and second harmonics, while the higher harmonics are shortened by the parasitic drain-source capacitance. The PA design is based on a simplified transistor model which is optimized for harmonically tuned PAs. The model parameters are extracted from IV- and S-parameter measurements of the packaged LDMOS device. A good agreement between the simulation and measurement results shows the accuracy of the modeling and PA design procedure.
  • Keywords
    MOS integrated circuits; UHF power amplifiers; elemental semiconductors; microwave integrated circuits; silicon; transistor circuits; LDMOS transistor; S-parameter measurements; Si; frequency 1 GHz; harmonically tuned power amplifier; parasitic drain-source capacitance; power 15 W; power added efficiency; second harmonics; voltage 50 V; Costs; Design optimization; Frequency; High power amplifiers; Impedance; Packaging; Parasitic capacitance; Particle measurements; Power engineering and energy; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5517459
  • Filename
    5517459