Title :
A highly reliable 1T/1C ferroelectric memory
Author :
Dong-Jin Jung ; Sung-Yung Lee ; Bon-Jae Koo ; Yoo-Sang Hwang ; Dong-Won Shin ; Jin-Woo Lee ; Yoon-Soo Chun ; Soo-Ho Shin ; Mi-Hyang Lee ; Hong-Bae Park ; Sang-In Lee ; Kinam Kim ; Jong-Gil Lee
Author_Institution :
Technol. Dev., Semicond. R&D Center, Samsung Electron. Co., Kyungki-Do, South Korea
Abstract :
A reliable 1T/1C ferroelectric RAM has been successfully fabricated with 1.2 /spl mu/m conventional CMOS technology by adopting IrO/sub 2/ electrode and the Ti-rich PZT thin film. The Ti-rich PZT capacitor shows no degradation of sensing Pr after integration process. After 1/spl times/10/sup 10/ cycling, the loss of remnant polarization was less than 5%. In thermally accelerated (150/spl deg/C) test condition, more than 14 /spl mu/C/cm/sup 2/ for both data 0 and data 1 sensing Pr values are obtained even after 10 years.
Keywords :
CMOS memory circuits; ferroelectric storage; integrated circuit reliability; random-access storage; 150 C; 1T/1C ferroelectric memory; CMOS technology; IrO/sub 2/; IrO/sub 2/ electrode; PZT; PZT thin film capacitor; PbZrO3TiO3; RAM; reliability; remnant polarization; thermally accelerated test; CMOS technology; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Thermal degradation; Transistors;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689225
