DocumentCode
3140787
Title
Silicon based nonvolatile magnetic memristor
Author
Xiong, C. ; Zhang, X. ; Luo, Z. ; Wang, J. ; Chen, J. ; Guo, Z.
Author_Institution
Sch. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
This work proposes a new kind of nonvolatile magnetic storage by combing Hall device and memristor, which has a good performance in magnetic signal storage and has a potential for magnetic logic calculation.
Keywords
Hall effect devices; MRAM devices; elemental semiconductors; magnetic logic; memristors; silicon; Hall device; magnetic logic calculation; magnetic signal storage; memristor; nonvolatile magnetic storage; silicon based nonvolatile magnetic memristor; Electrodes; Magnetic fields; Magnetic semiconductors; Magnetic tunneling; Memristors; Nonvolatile memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157551
Filename
7157551
Link To Document