Low pressure encapsulated resonant structures excited electrostatically

Author

Corman, Thierry ; Enoksson, Peter ; Stemme, Göran

Author_Institution

Dept. of Signals Sensors & Syst., R. Inst. of Technol., Stockholm, Sweden

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

101

Abstract

Low pressure encapsulated resonant structures were built with a cavity pressure of 1 mbar, obtained and measured for several structures bonded anodically to glass lids with different recess depths from 20.5 to 44 μm. The same pressure has also been demonstrated for structures with integrated electrodes for electrostatic excitation and capacitive detection. No getter material or gas evacuation procedure was used. No leakage has been observed and measurements indicate 1 mbar and the same Q-values after six months storage. A theoretical model for the squeeze-film Q-factor taking into account both the pressure and the recess depth is also presented

Keywords

Q-factor; electrostatic devices; encapsulation; micromechanical resonators; semiconductor device packaging; 1 mbar; 20.5 to 44 mum; Q-values; Si; anodic bonding; capacitive detection; cavity pressure; electrostatic excitation; glass lids; integrated electrodes; low pressure encapsulated resonant structures; recess depth; silicon resonator; squeeze-film Q-factor; theoretical model; Bonding; Electrodes; Electrostatic measurements; Gettering; Glass; Pressure measurement; Q factor; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613592

Filename

613592