Offset reduction of Hall plates in three different crystal planes

Author

Bellekom, Sandra ; Sarro, Lina

Author_Institution

Fac. of Electr. Eng., Delft Univ. of Technol., Netherlands

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

233

Abstract

Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by mechanical stress in the device. The offset can be reduced with a factor 1000 to 100000 when the spinning-current principle is applied. This paper presents a model for the influence of mechanical stress in (spinning)-current Hall plates, realized in different crystal planes. Measurements show that the offset of silicon Hall plates in (100), (110) and (111) planes is reduced to a few microtesla, independent of the amplitude of the original offset

Keywords

Hall effect transducers; elemental semiconductors; internal stresses; magnetic sensors; piezoresistance; silicon; (100) planes; (110) planes; (111) planes; Si; Si Hall plates; crystal planes; magnetic sensor; mechanical stress; offset reduction; piezoresistive effect; spinning-current principle; Bridge circuits; Current measurement; Magnetic field measurement; Magnetic sensors; Mechanical sensors; Permanent magnets; Piezoresistance; Silicon; Stress; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613626

Filename

613626