Micropatterning process of ferroelectric oxides by irradiation of an electron beam on metal naphthenate films

Author

Okamura, Soichiro ; Kakimi, Atsushi ; Yagi, Yukie ; Mori, Katsumi ; Tsukamoto, Takeyo

Author_Institution

Dept. of Appl. Phys., Sci. Univ. of Tokyo, Japan

fYear

1991

fDate

33457

Firstpage

62

Lastpage

65

Abstract

Fine micropatterns with linewidth of 0.35 μm were fabricated by irradiation with an electron beam of metal naphthenate films, being precursors of ferroelectric oxides, and development with a solvent. Relatively large patterns were crystallized into the single phase Bi₄Ti₃O₁₂ with c-axis orientation by successive heat-treatment at 800°C. Micropatterns with linewidth of 1 μm were crystallized into single crystals and their volume was reduced to 15% by the heat-treatment of PZT and Bi₄Ti₃O₁₂ thin films formed by the dipping pyrolysis method, which is the base of this patterning process. Good ferroelectric properties were exhibited; the remanent polarization P_r and the coercive field E_c were 24 μC/cm² and 39 kV/cm for PZT, and 1.6 μC/cm² and 24 kV/cm for Bi₄Ti₃O₁₂, respectively

Keywords

bismuth compounds; coating techniques; dielectric polarisation; electron beam lithography; ferroelectric thin films; heat treatment; lead compounds; piezoceramics; pyrolysis; 0.35 micron; 1 micron; 800 degC; Bi₄Ti₃O₁₂; PZT; PbZrO3TiO3; c-axis orientation; coercive field; crystallization; dipping pyrolysis method; electron beam irradiation; ferroelectric oxides; ferroelectric properties; heat-treatment; linewidth; metal naphthenate films; micropatterning process; remanent polarization; single phase; Crystallization; Dry etching; Electron beams; Fabrication; Ferroelectric films; Ferroelectric materials; Semiconductor thin films; Silicon; Solvents; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Conference_Location

University Park, PA

Print_ISBN

0-7803-1847-1

Type

conf

DOI

10.1109/ISAF.1994.522298

Filename

522298