Title :
On-sun concentrator performance of GaInP/GaAs tandem cells
Author :
Friedman, D.J. ; Kurtz, S.R. ; Sinha, K. ; McMahon, W.E. ; Kramer, C.M. ; Olson, J.M. ; Lasich, J.B. ; Cleeve, A.X. ; Connaughton, I.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The GaInP/GaAs concentrator device has been adapted for and tested in a prototype “real-world” concentrator power system. The device achieved an on-sun efficiency of 27%±1% in the range of approximately 80-400 suns with device operating temperatures of 32°C to 50°C. We discuss ways of further improving this performance for future devices
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor materials; solar cells; solar energy concentrators; 27 percent; 32 to 50 C; GaInP-GaAs; GaInP/GaAs concentrator device; GaInP/GaAs tandem cells; concentrator power system; device operating temperatures; on-sun efficiency; performance improvement; Conductivity; Cooling; Electrical resistance measurement; Fingers; Fluctuations; Fluid flow measurement; Gallium arsenide; Metallization; Photoconductivity; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563949
