Title :
Micromechanical resonant magnetic sensor in standard CMOS
Author :
Eyre, Beverley ; Pister, Kristofer S J
Author_Institution :
Dept. of Electr. & Electron. Eng., Muroran Inst. of Technol., Hokkaido, Japan
Abstract :
A novel magnetic field sensor has been fabricated using xenon difluoride etching of standard CMOS. The field is detected by measuring the vibration amplitude of a mechanical Lorentz force oscillator. The oscillator consists of a current loop on a silicon dioxide plate. Amplitude is detected with a polysilicon piezoresistor Wheatstone bridge. The devices were made in the Orbit 2 micron N-well process through MOSIS
Keywords :
CMOS integrated circuits; Hall effect transducers; bridge circuits; magnetic sensors; micromechanical resonators; microsensors; piezoresistive devices; thermal noise; vibration measurement; xenon compounds; 2 mum; MOSIS; Orbit 2 micron N-well process; Si; SiO2; SiO2 plate; Xe difluoride etching; XeF2; current loop; magnetic field sensor; mechanical Lorentz force oscillator; micromechanical resonant magnetic sensor; polysilicon piezoresistor Wheatstone bridge; standard CMOS magnetometer; vibration amplitude; Etching; Extraterrestrial measurements; Magnetic field measurement; Magnetic resonance; Magnetic sensors; Mechanical sensors; Micromechanical devices; Oscillators; Vibration measurement; Xenon;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613670
