CMOS compatible wafer scale adhesive bonding for circuit transfer

Author

van der Green, S. ; Rosmeulen, Maarten ; Jansen, Philippe ; Baert, Kris ; Deferm, Ludo

Author_Institution

IMEC, Leuven, Belgium

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

629

Abstract

Reports on a transfer technique for CMOS circuits based on a newly developed bonding technique, namely wafer scale adhesive bonding using epoxies. The circuit transfer sequence consists of three steps: bonding a CMOS processed SIMOX wafer to a Pyrex glass wafer, thinning the SIMOX wafer down to the buried oxide and exposing the contact pads. A test chip was designed to evaluate the impact of circuit transfer on the device performance. Measurements have shown a slight increase in leakage current and a small change of threshold voltage due to stress induced by the circuit transfer

Keywords

CMOS integrated circuits; SIMOX; adhesion; etching; integrated circuit measurement; wafer bonding; CMOS compatible wafer scale adhesive bonding; Pyrex glass wafer; SIMOX wafer; buried oxide; circuit transfer; device performance; epoxies; leakage current; threshold voltage; CMOS process; CMOS technology; Circuit testing; Current measurement; Glass; Leakage current; Semiconductor device measurement; Stress measurement; Threshold voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613730

Filename

613730