A novel SiC on insulator technology using wafer bonding

This paper reports on a process to fabricate a single crystal 3C-SiC on SiO₂ structure using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces to transfer a 3C-SiC film grown on a Si wafer to a SiO₂ film grown on a Si wafer. 3C-SiC films grown on the 3C-SiC on SiO₂ structure have a much lower defect density than conventional 3C-SiC on Si films