DocumentCode :
314201
Title :
Effects of metallic impurities on anisotropic etching of silicon in aqueous KOH-solutions
Author :
Hein, A. ; Dorsch, O. ; Obermeier, E.
Author_Institution :
Microsensor & Microactuator Technol. Center, Tech. Univ. Berlin, Germany
Volume :
1
fYear :
1997
fDate :
16-19 Jun 1997
Firstpage :
687
Abstract :
Various effects of metallic impurities dissolved in aqueous KOH solutions on the anisotropic etching of silicon are investigated. The changes of the anisotropy, surface roughness of {100} and {111} planes and the shape of convex corners are presented. Metals such as iron, sodium, chromium, aluminum and zinc cause an increase, and copper and nickel a decrease in the etch anisotropy. The observed surface roughness increases strongly with impurity content. At lower contents of metallic impurities the angle of the convex corners have a value near 150°. However, with rising metallic ion content the value goes down to 143°
Keywords :
elemental semiconductors; etching; impurities; micromachining; silicon; surface topography; KOH:Al; KOH:Cd; KOH:Cr; KOH:Cu; KOH:Fe; KOH:Mn; KOH:Na; KOH:Pb; KOH:Zn; Si; anisotropic etching; aqueous KOH-solutions; convex corners shape; etch anisotropy; metallic impurities; micromachining; surface roughness; Aluminum; Anisotropic magnetoresistance; Chromium; Etching; Impurities; Iron; Rough surfaces; Shape; Silicon; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
Type :
conf
DOI :
10.1109/SENSOR.1997.613745
Filename :
613745
Link To Document :
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