Title :
Improved 600 and 1200 V IGBT with low turn-off loss and high ruggedness
Author :
Tsunoda, Tetsujiro ; Hideshima, Makoto ; Kuwahara, Masashi ; Kuramoto, Tsuyoshi ; Nakagawa, Akio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel 600 and 1200 V IGBT (insulated-gate bipolar transistor) family has been developed for operation at more than 20 kHz with sufficient ruggedness. It was found that turn-off loss can be reduced by optimizing the n/sup -/ layer thickness as well as the n/sup +/ buffer impurity profile. A thick n/sup -/ layer was found to be an important factor in improving device ruggedness. Turn-off loss was successfully reduced to one-third of that in conventional IGBTs, while a large safe operating area was retained.<>
Keywords :
insulated gate bipolar transistors; power transistors; 1200 V; 20 kHz; 600 V; IGBT; insulated-gate bipolar transistor; low turn-off loss; n/sup +/ buffer impurity profile; n/sup -/ layer thickness; Charge carrier lifetime; Design optimization; Impurities; Insulated gate bipolar transistors; Low voltage; Microelectronics; Power electronics; Research and development; Switching frequency; Switching loss;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131166
