Discrimination of parasitic bipolar operating modes in ICs with emission microscopy

Author

Boit, C. ; Kölzer, J. ; Benzinger, H. ; Dallmann, A. ; Herzog, M. ; Qincke, J.

Author_Institution

Siemens AG, Munchen, West Germany

fYear

1990

fDate

27-29 March 1990

Firstpage

81

Lastpage

85

Abstract

The characterization of bipolar device operation modes by emission microscopy is discussed. In order to separate different radiation mechanisms, diode and parasitic bipolar n-MOS transistor test structures have been investigated at different temperatures and operating modes. Since it is extremely sensitive to the high energy branch of the radiation, the S25 photocathode of an image intensifier enables a distinction to be made, by means of temperature variation between forward and reverse operation, diffusion, and field current. This measuring technique allows latch-up to be identified as a diffusion-controlled phenomenon.<>

Keywords

CMOS integrated circuits; image intensifiers; integrated circuit testing; optical microscopy; photocathodes; CMOS circuits; ICs; S25 photocathode; bipolar device operation modes; diffusion; diffusion-controlled phenomenon; diode structures; emission microscopy; field current; forward operation; image intensifier; latch-up; measuring technique; n-type; parasitic bipolar n-MOS transistor test structures; parasitic bipolar operating modes; radiation mechanisms; reverse operation; temperature variation; Band pass filters; Cathodes; Convolution; Diodes; Image intensifiers; Microscopy; Optical filters; Optical sensors; Stimulated emission; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66066

Filename

66066