Title :
Excellent process control technology for highly manufacturable and high performance 0.18 /spl mu/m CMOS LSIs
Author :
Nakayama, T. ; Asamura, T. ; Kako, M. ; Murota, M. ; Matsumoto, M. ; Washizu, Y. ; Tomose, K. ; Kasai, K. ; Okayama, Y. ; Hashimoto, K. ; Ohuchi, K. ; Hattori, K. ; Shiozawa, J. ; Harakawa, H. ; Matsuoka, F. ; Kinugawa, M.
Author_Institution :
ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Highly manufacturable and high performance 0.18 μm CMOS technology for logic LSIs with excellent process controllability has been proposed. N/sub 2/O based oxynitride process and OPC (Optical Proximity Correction) technology was developed and realized superior uniformity in CMOSFET characteristics. A new Ti salicide technology which was fine line effect free down to 0.15 μm was also established. These technologies were demonstrated and verified by application to 0.18 μm high performance logic LSI with high performance interconnects technology.
Keywords :
CMOS integrated circuits; VLSI; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; large scale integration; process control; 0.15 to 0.18 micron; CMOSFET characteristics; N/sub 2/O; N/sub 2/O based oxynitride process; Ti salicide technology; TiSi; high performance CMOS LSI; high performance interconnects technology; logic LSI; manufacturable LSI; optical proximity correction technology; process control technology; CMOS logic circuits; CMOS process; CMOS technology; Controllability; Large scale integration; MOSFET circuits; Manufacturing processes; Microprocessors; Nitrogen; Process control;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689234
