DocumentCode :
3143100
Title :
Analysis of heteroepitaxial AlGaAs/Si tandem solar cell for concentrator applications
Author :
Yang, Ming-Ju ; Taylor, Stephen J. ; Yamaguchi, Masafumi
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
105
Lastpage :
108
Abstract :
A development of monolithic AlGaAs/Si tandem solar cells for concentration application is proposed. A theoretical analysis was carried out to express the device parameters as a function of the doping concentration and the dislocation density. From the results of this theoretical analysis, it is demonstrated that when the dislocation density is reduced to lower than 104 cm-2, the photocurrent matching between the top cell and the bottom cell can be satisfied at the Al composition of AlxGa1-xAs, x=0.21 and the efficiency of the AlGaAs top cell increases rapidly in 1-100 Sun concentration region. In order to achieve very high efficiency, the dislocation density must be reduced to lower than 5×105 cm-2 and concentration ratios greater than 100 times must be used. From these results, it is suggested that monolithic AlGaAs/Si tandem solar cells have the potential to achieve high efficiency at low cost by using high solar concentration ratios
Keywords :
III-V semiconductors; aluminium compounds; dislocation density; elemental semiconductors; epitaxial growth; gallium arsenide; p-n heterojunctions; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; solar energy concentrators; AlGaAs-Si; AlGaAs/Si tandem solar cell; concentrator solar cells; dislocation density; doping concentration; heteroepitaxial solar cells; high efficiency; photocurrent matching; solar concentration ratios; Artificial intelligence; Cost function; Doping; Neodymium; Optical reflection; Photoconductivity; Photovoltaic cells; Semiconductor process modeling; Sun; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563958
Filename :
563958
Link To Document :
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