DocumentCode
3143122
Title
GaN technology for microwave and millimeter wave applications
Author
Kolias, Nicholas J. ; Whelan, Colin S. ; Kazior, Thomas E. ; Smith, Kurt V.
Author_Institution
Raytheon Co., Andover, MA, USA
fYear
2010
fDate
23-28 May 2010
Firstpage
1222
Lastpage
1225
Abstract
After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today´s Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.
Keywords
III-V semiconductors; MIMIC; MMIC; gallium compounds; integrated circuit reliability; wide band gap semiconductors; GaN; MIMIC; MMIC; communication systems; integrated circuit reliability; radar systems; Gallium arsenide; Gallium nitride; MMICs; Microwave devices; Microwave technology; Microwave transistors; Millimeter wave technology; Radar; Silicon carbide; Thermal conductivity; MMICs; gallium compounds; microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517592
Filename
5517592
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