Title :
GaN technology for microwave and millimeter wave applications
Author :
Kolias, Nicholas J. ; Whelan, Colin S. ; Kazior, Thomas E. ; Smith, Kurt V.
Author_Institution :
Raytheon Co., Andover, MA, USA
Abstract :
After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today´s Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.
Keywords :
III-V semiconductors; MIMIC; MMIC; gallium compounds; integrated circuit reliability; wide band gap semiconductors; GaN; MIMIC; MMIC; communication systems; integrated circuit reliability; radar systems; Gallium arsenide; Gallium nitride; MMICs; Microwave devices; Microwave technology; Microwave transistors; Millimeter wave technology; Radar; Silicon carbide; Thermal conductivity; MMICs; gallium compounds; microwave devices;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517592
