DocumentCode :
3143197
Title :
Compact HBT modeling: Status and challenges
Author :
Rudolph, Matthias
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1206
Lastpage :
1209
Abstract :
HBTs show much better performance compared to their BJT predecessors, but also require enhanced models for reliable circuit design. This talk addresses which enhancements are required and available in state-of-the-art models, namely, accounting for self-heating and bias-dependence of transit-time. Limitations of these models, and thus challenges for future modeling efforts, will also be addressed, like: modeling of large and packaged devices, noise modeling, operation in deep saturation, and operation at and beyond transit frequency.
Keywords :
heterojunction bipolar transistors; semiconductor device models; BJT predecessors; circuit design; compact HBT modeling; noise modeling; packaged devices; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Low-noise amplifiers; Optical amplifiers; Oscillators; Power amplifiers; Predictive models; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517597
Filename :
5517597
Link To Document :
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