A 15–50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology

Author

Chen, Jiann-Jong ; Kuo, Chia-Chen ; Hsin, Yue-Ming ; Wang, Huifang

Author_Institution

Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

23-28 May 2010

Firstpage

1

Lastpage

1

Abstract

A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-μm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port-to-port isolations of better than 30 dB from 15 to 50 GHz for both down and up-conversion with a chip size of 0.45 mm × 0.45 mm. From 15 to 50 GHz, this mixer has an 1-dB compression point of input power of 4-10 dBm and an IF bandwidth of 5 GHz. To the author´s knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technology to date.

Keywords

CMOS analogue integrated circuits; MIMIC; MMIC mixers; field effect transistor circuits; CMOS technology; broadband resistive FET ring mixer; frequency 15 GHz to 50 GHz; high frequency MMIC resistive FET ring mixer; size 0.18 mum; size 0.45 mm; Bandwidth; CMOS integrated circuits; CMOS technology; Centralized control; Control systems; FET integrated circuits; Frequency conversion; Isolation technology; Mixers; Sensor systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5517600

Filename

5517600