Title :
A 15–50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology
Author :
Chen, Jiann-Jong ; Kuo, Chia-Chen ; Hsin, Yue-Ming ; Wang, Huifang
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-μm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port-to-port isolations of better than 30 dB from 15 to 50 GHz for both down and up-conversion with a chip size of 0.45 mm × 0.45 mm. From 15 to 50 GHz, this mixer has an 1-dB compression point of input power of 4-10 dBm and an IF bandwidth of 5 GHz. To the author´s knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technology to date.
Keywords :
CMOS analogue integrated circuits; MIMIC; MMIC mixers; field effect transistor circuits; CMOS technology; broadband resistive FET ring mixer; frequency 15 GHz to 50 GHz; high frequency MMIC resistive FET ring mixer; size 0.18 mum; size 0.45 mm; Bandwidth; CMOS integrated circuits; CMOS technology; Centralized control; Control systems; FET integrated circuits; Frequency conversion; Isolation technology; Mixers; Sensor systems;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517600
